产品号GS-065-150-1-D
产品号Contact Us for More Details >
VDS650 V E-HEMT
IDS150 A
RDS(on)10 mΩ
QG33 nC
尺寸(MM)12.56 x 5.60

GS-065-150-1-D

650V增强型氮化镓晶体管

The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. 氮化镓系统 (GaN Systems) implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Easy gate drive requirements
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 12.56 x 5.60 mm PCB footprint
  • RoHS 6 compliant
  • Dual gate drive for optimized layout & paralleling

应用

  • High efficiency power conversion
  • High density power conversion
  • AC-DC Converters
  • On Board Battery Chargers
  • Traction Drive
  • Bridgeless Totem Pole PFC
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Single and 3Φ inverter legs
  • Solar Power
  • Fast Battery Charging
  • DC-DC converter