产品号GS66516T-EVBDB2
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评估板:GS66516T-EVBDB2

650 V GaN E-HEMT子板

本产品需要搭配母板(GS665MB-EVB)

The GS66516T-EVBDB daughter board consists of two 氮化镓系统 (GaN Systems) 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design.

  • Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation
  • Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board
  • Current shunt position for switching characterization testing
  • Universal form factor and footprint for all products

Created in partnership with Broadcom, featuring the ACPL-P346 Gate Drive optocoupler for driving high speed GaN transistors